Datasheet

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Document Number: 72287
S-81544-Rev. C, 07-Jul-08
Vishay Siliconix
Si7900AEDN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0123456
I
D
= 8.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.001
0
1
160
200
80
10
0.1
Power (W)
Time (s)
40
120
0.01
Threshold Voltage
Safe Operating Area, Junction-to-Case
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
100
1
0.1 1 10 100
0.01
10
1 ms
- Drain Current (A)I
D
0.1
Limited by R
DS(on)
*
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
10 s
1 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1 100 600
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 115 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10