Datasheet

Document Number: 72287
S-81544-Rev. C, 07-Jul-08
www.vishay.com
3
Vishay Siliconix
Si7900AEDN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
012345
V
GS
= 5 thru 2 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
V
GS
= 4.5 V
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 1.8 V
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 8.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
Transfer Characteristics
Gate Charge
Source-Drain Diode Forward Voltage
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5
T
C
= - 55 °C
125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
0
1
2
3
4
5
024681012
V
DS
= 10 V
I
D
= 6.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.2 1.5
0.1
10
20
0 0.3 0.6 0.9
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1