Datasheet
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Document Number: 72287
S-81544-Rev. C, 07-Jul-08
Vishay Siliconix
Si7900AEDN
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.40 0.9 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
± 1 µA
V
DS
= 0 V, V
GS
= ± 12 V
± 10 mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
20
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 8.5 A
0.020 0.026
Ω
V
GS
= 2.5 V, I
D
= 8 A
0.022 0.030
V
GS
= 1.8 V, I
D
= 7 A
0.026 0.036
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 8.5 A
25 S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.65 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.5 A
10.5 16
nCGate-Source Charge
Q
gs
1.9
Gate-Drain Charge
Q
gd
1.8
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
G
= 6 Ω
0.85 1.25
ns
Rise Time
t
r
1.3 2.0
Turn-Off Delay Time
t
d(off)
8.6 13
Fall Time
t
f
4.2 6.5
Gate-Current vs. Gate-Source Voltage
0
2
4
6
8
10
0 3 6 9 12 15 18
- Gate Current (mA)I
GSS
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
03691215
0.01
100
10 000
T
J
= 25 °C
- Gate Current (A)I
GSS
0.1
1
10
1000
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C