Datasheet

ManualsBrandsVISHAY ManualsFETsSI7900AEDN-T1-GE3, MOSFET

Vishay Siliconix

Si7900AEDN

Document Number: 72287

S-81544-Rev. C, 07-Jul-08

www.vishay.com

Dual N-Channel 20-V (D-S) MOSFET, Common Drain

FEATURES

• Halogen-free Option Available

• TrenchFET

Power MOSFET: 1.8 V Rated

•New PowerPak

Package

- Low Thermal Resistance, R

thJC

- Low 1.07 mm Profile

• 3000 V ESD Protection

APPLICATIONS

• Protection Switch for 1-2 Li-ion Batteries

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.026 at V

= 4.5 V

8.5

0.030 at V

= 2.5 V

0.036 at V

= 1.8 V

3.30 mm 3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)

Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

2.6 kΩ

N-Channel N-Channel

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

± 12

Continuous Drain Current (T

= 150 °C)

= 25 °C

8.5 6

= 85 °C

6.4 4.3

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.9 1.4

Maximum Power Dissipation

= 25 °C

3.1 1.5

= 85 °C

1.6 0.79

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

32 40

°C/W

Steady State 65 82

Maximum Junction-to-Case Steady State

thJC

2.2 2.8

RoHS

COMPLIANT

Summary of content (12 pages)

PAGE 1
Si7900AEDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 8.5 20 0.030 at VGS = 2.5 V 8 0.036 at VGS = 1.8 V 7 • Halogen-free Option Available • TrenchFET® Power MOSFET: 1.8 V Rated • New PowerPak® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • 3000 V ESD Protection RoHS COMPLIANT APPLICATIONS • Protection Switch for 1-2 Li-ion Batteries PowerPAK 1212-8 D1 S1 3.30 mm D2 3.
PAGE 2
Si7900AEDN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS = VGS, ID = 250 µA 0.40 Typ. Max. Unit Static VGS(th) Gate Threshold Voltage 0.9 V VDS = 0 V, VGS = ± 4.5 V ±1 µA VDS = 0 V, VGS = ± 12 V ± 10 mA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 20 IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a 20 A VGS = 4.5 V, ID = 8.
PAGE 3
Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 25 25 TC = - 55 °C I D - Drain Current (A) ID - Drain Current (A) VGS = 5 thru 2 V 20 15 1.5 V 10 5 25 °C 20 125 °C 15 10 5 0 0 1 2 3 4 0 0.0 5 0.5 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 VGS - Gate-to-Source Voltage (V) 0.06 RDS(on) - On-Resistance (Ω) 1.0 0.05 0.04 0.03 VGS = 1.8 V VGS = 2.
PAGE 4
Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) RDS(on) - On-Resistance (Ω) ID = 250 µA ID = 8.5 A 0.02 0.0 - 0.2 - 0.4 0.01 0.00 0 1 2 3 4 5 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs.
PAGE 5
Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
PAGE 6
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 7
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 8
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 9
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 10
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 11
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 12
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.