Datasheet

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Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
Vishay Siliconix
Si7850DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71625
.
Threshold Voltage
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0.01
0
1
100
40
60
10 6000.1
Time (s)
20
80
Power (W)
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 58 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-
3
10
-
2
110
-
1
10
-
4
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02