Datasheet

Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
3
Vishay Siliconix
Si7850DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 8 16 24 32 40
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
0
2
4
6
8
10
048121620
V
DS
= 30 V
I
D
= 10.3 A
-
Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
2.0 2.5
1
10
50
0.00 0.5 1.0 1.5
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1400
0 102030405060
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 10.3 A
T
J
- Junction Temperature (°C)
R
DS(on)
-
On-Resistance
(Normalized)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
I
D
= 10.3 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)