Datasheet

Vishay Siliconix
Si7850DP
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
1
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
60
0.022 at V
GS
= 10 V
10.3
0.031 at V
GS
= 4.5 V
8.7
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerP AK SO-8
Bottom V i e w
Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free)
Si7850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFE
T
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Guaranteed by design, not subject to production testing.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
10.3 6.2
A
T
A
= 85 °C
7.5 4.5
Continuous Source Current
I
S
3.7 1.5
Pulsed Drain Current
I
DM
40
Avalanche Current
b
I
AS
15
Single Avalanche Energy
b
E
AS
11 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
4.5 1.8
W
T
A
= 85 °C
2.3 0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
22 28
°C/WSteady State 58 70
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.6 3.3
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• PWM Optimized for Fast Switching
• 100 % R
g
Tested
APPLICATIONS
• Primary Side Switch for 24 V DC/DC Applications
• Secondary Synchronous Rectifier