Datasheet

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Document Number: 70689
S-81544-Rev. C, 07-Jul-08
Vishay Siliconix
Si7810DN
TYPICAL CHARACTERISTICS T
A
= 25°C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689.
Threshold Voltage
- 1.2
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
I
D
= 250 µA
V ariance (V) V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.01
0
1
40
50
10
600
Time (s)
30
20
0.1 10 100
Power (W)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 1 0 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized E
f
f
ective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance