Datasheet

Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
3
Vishay Siliconix
Si7810DN
TYPICAL CHARACTERISTICS T
A
= 25°C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.04
0.08
0.12
0.16
0.20
048121620
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
- On-Resistance (Ω)
0
2
4
6
8
10
0 2 4 6 8 10 12 14
V
DS
= 50 V
I
D
= 5.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
20
10
1
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
0 2 04 06 080
C
os s
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2
.
2
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS
= 10 V
I
D
= 5.4 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
- On-Resistance (
Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.00
0.04
0.08
0.12
0
.
16
0 2468 10
I
D
= 5.4 A