Datasheet

Vishay Siliconix
Si7810DN
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
•TrenchFET
®
Power MOSFET
• New Low Thermal Resistance
• PowerPAK
®
1212-8 Package with Low
1.07 mm Profile
• PWM Optimized
APPLICATIONS
• Primary Side Switch
• In-Rush Current Limiter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
100
0.062 at V
GS
= 10 V
5.4
0.084 at V
GS
= 6 V
4.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
5.4 3.4 A
T
A
= 70 °C 4.3 2.8
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
3.2 1.3 A
Single Avalanche Current
L = 0.1 mH
I
AS
19
Single Avalanche Energy (Duty Cycle 1 %) E
AS
18 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.8 1.5
W
T
A
= 70 °C 2.0 0.8
Operating Junction and Storage Temperature Range T
J
, T
stg
– 55 to 150
°C
Soldering Recommendations
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
26 33
°C/W
Steady State 65 81
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.9 2.4
RoHS
COMPLIANT