Datasheet

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Document Number: 68704
S-81450-Rev. A, 23-Jun-08
Vishay Siliconix
Si7716ADN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
=10A
0
24
48
72
96
120
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS
Limited