Datasheet

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Document Number: 65533
S09-2269-Rev. A, 02-Nov-09
Vishay Siliconix
Si7619DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 2.0
- 1.8
- 1.6
- 1.4
- 1.2
- 1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
02468 10
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V )
0
24
4
8
72
96
120
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
1s
10 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D