Datasheet

Document Number: 71738
S-83043-Rev. D, 22-Dec-08
www.vishay.com
3
Vishay Siliconix
Si7414DN
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 4 8 12 16
V
DS
= 30 V
I
D
= 8.7 A
Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
-
V
SD
- Source-to-Drain Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
30
10
1
Source Current (A)I
S
-
T
J
= 25 °C
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
1200
0 102030405060
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS
= 10 V
I
D
= 8.7 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
- Gate-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
0246810
I
D
= 8.7 A
R
DS
(on)
- On-Resistance (Ω)