Datasheet

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Document Number: 69941
S-81549-Rev. B, 07-Jul-08
Vishay Siliconix
Si7405BDN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.01
0.02
0.03
0.04
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
I
D
=13.5A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
1ms
10 ms
1s
10 s
Limited byR
DS(on)
*
BVDSS
DC
100 ms