Datasheet

Document Number: 69941
S-81549-Rev. B, 07-Jul-08
www.vishay.com
3
Vishay Siliconix
Si7405BDN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5thru 2 V
V
GS
=1.5V
V
GS
=1V
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30 35 40
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=2.5V
V
GS
=4.5V
V
GS
=1.8V
0
2
4
6
8
0 1020304050607080
I
D
= 13.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=6V
V
DS
=9.6V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
T
C
=25 °C
T
C
=- 55 °C
C
rss
0
1000
2000
3000
4000
5000
6000
036912
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=4.5V,2.5V,1.8V,I
D
=13.5A