Datasheet

ManualsBrandsVISHAY ManualsFETsSI7405BDN-T1-GE3, MOSFET

Vishay Siliconix

Si7405BDN

New Product

Document Number: 69941

S-81549-Rev. B, 07-Jul-08

www.vishay.com

P-Channel 12-V (D-S) MOSFET

FEATURES

• Halogen-free Option Available

• TrenchFET

Power MOSFET

APPLICATIONS

• Load Switch, PA Switch and Power Switch for Portable

Devices

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A) Q

(Typ.)

- 12

0.013 at V

= - 4.5 V

- 16

46 nC

0.017 at V

= - 2.5 V

- 16

0.024 at V

= - 1.8 V

- 16

Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free)

Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

3.30 mm

PowerPAK 1212-8

Bottom View

P-

hannel M

FET

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257).. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 81 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 12

Gate-Source Voltage

± 8

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 16

= 70 °C

- 16

= 25 °C

- 13.5

b, c

= 70 °C

- 11

b, c

Pulsed Drain Current

- 40

Continuous Source-Drain Diode Current

= 25 °C

- 16

= 25 °C

- 3

b, c

Maximum Power Dissipation

= 25 °C

= 70 °C

= 25 °C

3.6

b, c

= 70 °C

2.3

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

thJA

28 35

°C/W

Maximum Junction-to-Case (Drain) Steady State

thJC

2.9 3.8

RoHS

COMPLIANT

Summary of content (13 pages)

PAGE 1
New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.013 at VGS = - 4.5 V - 16a 0.017 at VGS = - 2.5 V - 16a 0.024 at VGS = - 1.8 V a - 16 Qg (Typ.) 46 nC • Halogen-free Option Available • TrenchFET® Power MOSFET RoHS APPLICATIONS COMPLIANT • Load Switch, PA Switch and Power Switch for Portable Devices PowerPAK 1212-8 S 3.30 mm 3.
PAGE 2
New Product Si7405BDN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max.
PAGE 3
New Product Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 30 VGS = 1.5 V 20 6 4 TC = 125 °C 10 2 TC = 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.3 VDS - Drain-to-Source Voltage (V) 1.2 1.5 Transfer Characteristics 0.06 6000 0.05 5000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.9 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.
PAGE 4
New Product Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 100 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 13.5 A TJ = 25 °C 10 0.03 0.02 TA = 125 °C 0.01 TA = 25 °C 0 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.7 40 ID = 250 µA 30 Power (W) VGS(th) (V) 0.6 0.
PAGE 5
New Product Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 50 30 Power Dissipation (W) I D - Drain Current (A) 40 30 Package Limited 20 25 20 15 10 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit
PAGE 6
New Product Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4.
PAGE 7
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 8
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 9
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 10
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 11
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 13
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