Datasheet

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Document Number: 71874
S09-0270-Rev. F, 16-Feb-09
Vishay Siliconix
Si7370DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 1.4
- 1.0
- 0.6
- 0.2
0.2
0.6
1.0
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power, Juncion-To-Ambient
0.001
0
1
80
100
20
100.01
Time (s)
60
40
Power (W)
0.1
Safe Operating Area
100
1
0.01 1 10 100
0.01
10
T
C
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
Limited by
R *
DS(on)
0.1
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 58 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM