Datasheet

Document Number: 71874
S09-0270-Rev. F, 16-Feb-09
www.vishay.com
3
Vishay Siliconix
Si7370DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.000
0.005
0.010
0.015
0.020
0 1020304050
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
0
2
4
6
8
10
0 1020304050
V
DS
= 30 V
I
D
= 5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
100
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
3000
3500
4000
0 15304560
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
-
50
-
25
0255
0
7
5 100 125 150 175
V
GS
= 10 V
I
D
= 5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
= 5 A
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)