Datasheet

ManualsBrandsVISHAY ManualsFETsSI7370DP-T1-E3, MOSFET

Vishay Siliconix

Si7370DP

Document Number: 71874

S09-0270-Rev. F, 16-Feb-09

www.vishay.com

N-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

Power MOSFET

• New Low Thermal Resistance PowerPAK

Package with Low 1.07 mm Profile

• PWM Optimized for Fast Switching

• 100 % R

Tested

APPLICATIONS

• Primary Side Switch for 24 V DC/DC Applications

• Secondary Synchronous Rectifier

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.011 at V

= 10 V 15.8

0.013 at V

= 6 V 14.5

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

Ordering Information: Si7370DP-T1-E3 (Lead (Pb)-free)

Si7370DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFE

Notes

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

± 20

Continuous Drain Current (T

= 150°C)

= 25 °C

15.8 9.6

= 70 °C 12.6 7.7

Continuous Source Current I

4.7 1.7

Pulsed Drain Current I

Avalanche Current I

Single Avalanche Energy E

125 mJ

Maximum Power Dissipation

= 25 °C

5.2 1.9

= 70 °C 3.3 1.25

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

19 24

°C/W

Steady State 52 65

Maximum Junction-to-Case (Drain) Steady State R

thJC

1.5 1.8

Summary of content (12 pages)

PAGE 1
Si7370DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 15.8 0.013 at VGS = 6 V 14.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested APPLICATIONS • Primary Side Switch for 24 V DC/DC Applications • Secondary Synchronous Rectifier PowerPAK SO-8 S 6.15 mm 5.
PAGE 2
Si7370DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 2.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 4.
PAGE 3
Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3500 0.015 VGS = 6 V VGS = 10 V 0.010 0.005 Ciss 3000 2500 2000 1500 1000 Crss Coss 500 0.000 0 0 10 20 30 40 50 0 15 ID - Drain Current (A) 30 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.1 10 VDS = 30 V ID = 5 A VGS = 10 V ID = 5 A 1.
PAGE 4
Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 100 80 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 0.6 - 0.2 60 40 - 0.6 20 - 1.0 - 1.4 - 50 0 - 25 0 25 50 75 100 125 150 175 0.1 0.01 0.001 TJ - Temperature ( °C) 10 1 Time (s) Single Pulse Power, Juncion-To-Ambient Threshold Voltage 100 10 µs Limited by R DS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s TC = 25 °C Single Pulse 0.1 10 s 100 s, DC 0.01 0.01 0.
PAGE 5
Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
PAGE 6
Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.
PAGE 7
VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK® SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace.
PAGE 8
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those of the SO-8. As in the single-channel package, the only exception is the extended drain connection area.
PAGE 9
Application Note AN821 www.vishay.
PAGE 10
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET RDS(on) with temperature (figure 7). On-Resistance vs. Junction Temperature R DS(on) - On-Resistance ( ) (Normalized) 1.8 VGS = 10 V ID = 23 A 1.6 1.
PAGE 11
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.
PAGE 12
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