Datasheet

Document Number: 73434
S-83051-Rev. B, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si7309DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
012345
V
GS
= 10 thru 5 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
20
0.00
0.05
0.10
0.15
0.20
0.25
0.30
048121620
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
03691215
I
D
= 3.9 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
V
DS
= 48 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
200
400
600
800
1000
0 102030405060
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V, 4.5 V
I
D
= 3.9 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)