Datasheet

Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si7288DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
=10V thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.010
0.013
0.016
0.019
0.022
0.025
0 1020304050
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0.0 2.1 4.2 6.3 8.4 10.5
V
DS
=30V
V
DS
=20V
I
D
=10A
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
150
300
450
600
750
0 8 16 24 32 40
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
=8A
V
GS
=10V
V
GS
=4.5V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)