Datasheet

ManualsBrandsVISHAY ManualsFETsSI7288DP-T1-GE3, MOSFET

Vishay Siliconix

Si7288DP

New Product

Document Number: 65366

S09-2113-Rev. A, 12-Oct-09

www.vishay.com

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Gen III Power MOSFET

• PWM Optimized

• 100 % R

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Backlight Inverter for LCD Displays

• DC/DC Converter

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A) Q

(Typ.)

0.019 at V

= 10 V

4.9

0.022 at V

= 4.5 V

N-Channel MOSFET

Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

6.15 mm

5.15 mm

Bottom View

PowerPAK

SO-8

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under Steady State conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 70 °C 17

= 25 °C

a, b

= 70 °C

8.2

a, b

Pulsed Drain Current

Source-Drain Current Diode Current

= 25 °C

3.0

a, b

Single Pulse Avalanche Current

L = 0.1 mH

Avalanche Energy

Maximum Power Dissipation

= 25 °C

15.6

= 70 °C

= 25 °C

3.6

a, b

= 70 °C

2.3

a, b

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

c, d

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit

Maximum Junction-to-Ambient

a, e

t ≤ 10 s

thJA

29 35

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

6.5 8.0

Summary of content (13 pages)

PAGE 1
New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.9 APPLICATIONS PowerPAK® SO-8 • Backlight Inverter for LCD Displays • DC/DC Converter S1 6.15 mm 5.
PAGE 2
New Product Si7288DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA ΔVDS/TJ ID = 250 µA 47 ΔVGS(th)/TJ ID = 250 µA - 5.2 VDS = VGS, ID = 250 µA 2.
PAGE 3
New Product Si7288DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 3 V 20 6 4 TC = 25 °C 10 2 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) Output Characteristics 3 4 5 Transfer Characteristics 0.025 750 0.022 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.019 0.
PAGE 4
New Product Si7288DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 8 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.06 TJ = 125 °C 0.04 0.02 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 70 0.2 56 - 0.
PAGE 5
New Product Si7288DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 2.0 16 1.6 12 1.2 Power (W) Power (W) Current Derating* 8 0.8 0.4 4 0.
PAGE 6
New Product Si7288DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 10 -4 Single Pulse 4.
PAGE 7
Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.
PAGE 8
VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK® SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace.
PAGE 9
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those of the SO-8. As in the single-channel package, the only exception is the extended drain connection area.
PAGE 10
Application Note AN821 www.vishay.
PAGE 11
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET RDS(on) with temperature (figure 7). On-Resistance vs. Junction Temperature R DS(on) - On-Resistance ( ) (Normalized) 1.8 VGS = 10 V ID = 23 A 1.6 1.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Dual 0.260 (6.61) 0.150 (3.81) 0.174 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) (4.42) 0.065 (1.65) 0.065 (1.65) 0.154 (1.27) 0.050 0.026 (0.66) (3.91) 0.024 (0.61) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 13
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