Datasheet

Vishay Siliconix
Si7121DN
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
www.vishay.com
5
New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
9
18
27
36
45
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Package Limited
I
D
- Drain Current (A)
Power, Junction-to-Case
0
13
26
39
52
65
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)