Datasheet

Document Number: 69956
S-81466-Rev. C, 23-Jun-08
www.vishay.com
3
Vishay Siliconix
Si7121DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10thru 5 V
V
GS
=3V
V
GS
=4V
0
0.01
0.02
0.03
0.04
0.05
0 102030405060
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
10
0 1020304050
I
D
=10A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=20V
V
DS
=10V
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
012345
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 125 °C
V
GS
=25 °C
V
GS
=- 55 °C
C
rss
0
600
1200
1800
2400
3000
0 6 12 18 24 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=- 10V
V
GS
= - 4.5 V
I
D
=10A