Datasheet

ManualsBrandsVISHAY ManualsFETsSI7121DN-T1-GE3, MOSFET

Vishay Siliconix

Si7121DN

New Product

Document Number: 69956

S-81466-Rev. C, 23-Jun-08

www.vishay.com

P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free

•TrenchFET

Power MOSFET

• 100% R

Tested

• 100% UIS Tested

APPLICATIONS

• Notebook Battery Charging

• Notebook Adapter Switch

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A) Q

(Typ.)

- 30

0.018 at V

= - 10 V

- 16

22 nC

0.0305 at V

= - 4.5 V

- 16

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 81 °C/W.

d. Package limited.

e. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 30

Gate-Source Voltage

± 25

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 16

= 70 °C

- 16

= 25 °C

- 10.6

a, b

= 70 °C

- 8.6

a, b

Pulsed Drain Current

- 50

Continuous Source-Drain Diode Current

= 25 °C

- 16

= 25 °C

- 3.0

a, b

Avalanche Current

L = 0.1 mH

- 20

Single-Pulse Avalanche Energy

20 mJ

Maximum Power Dissipation

= 25 °C

= 70 °C 33

= 25 °C

3.7

a, b

= 70 °C

2.4

a, b

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

e, f

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 10 s

thJA

26 33

°C/W

Maximum Junction-to-Case

Steady State

thJC

1.9 2.4

P-Channel MOSFET

3.30 mm 3.30 mm

PowerPAK

1212-8

Bottom View

Ordering Information: Si7121DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

RoHS

COMPLIANT

Summary of content (13 pages)

PAGE 1
New Product Si7121DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.018 at VGS = - 10 V - 16d 0.0305 at VGS = - 4.5 V - 16d - 30 • • • • Qg (Typ.) 22 nC Halogen-free TrenchFET® Power MOSFET 100% Rg Tested 100% UIS Tested RoHS COMPLIANT APPLICATIONS PowerPAK® 1212-8 • Notebook Battery Charging • Notebook Adapter Switch S 3.30 mm S 3.
PAGE 2
New Product Si7121DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max.
PAGE 3
New Product Si7121DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 60 VGS = 10 thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 4 V 30 20 3 2 VGS = 125 °C 1 10 VGS = 25 °C VGS = 3 V VGS = - 55 °C 0 0 0 1 2 3 4 0 5 1 Output Characteristics 4 5 Transfer Characteristics 0.05 3000 0.04 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.03 2 VGS = 4.
PAGE 4
New Product Si7121DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 10 A 1 TJ = 25 °C TJ = 150 °C 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 0.8 0.6 40 ID = 5 mA 0.
PAGE 5
New Product Si7121DN Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 I D - Drain Current (A) 36 27 Package Limited 18 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 13 0.8 0.4 0 0.
PAGE 6
New Product Si7121DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 7
Package Information Vishay Siliconix D4 PowerPAK® 1212-8, (SINGLE/DUAL) W H E2 E4 L K M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 K1 Notes: 1. Inch will govern 2 D2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs L K E2 E4 D2 D3(2x) D4 c A H 3 4 b θ D5 θ E3 Backside View of Dual Pad MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.97 1.04 1.
PAGE 8
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 9
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 10
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 11
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 13
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