Datasheet

Document Number: 68932
S-82616-Rev. B, 03-Nov-08
www.vishay.com
3
Vishay Siliconix
Si7114ADN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
15
30
45
60
02468 10
V
GS
=10thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.003
0.006
0.009
0.012
0 20406080 100
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
048 12 16 20 24
V
DS
=24V
I
D
=18 A
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
0.0 0.6 1.2 1.8 2.4 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
400
800
1200
1600
061218 24 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V
V
GS
=10V
I
D
=18 A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)