Datasheet

Vishay Siliconix
Si6954ADQ
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
www.vishay.com
1
N-Channel 2.5-V (G-S) Battery Switch
FEATURES
Halogen-free
TrenchFET
®
Power MOSFETs: 2.5 V Rated
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.053 at V
GS
= 10 V
3.4
0.075 at V
GS
= 4.5 V
2.9
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
1
S
1
N-Channel MOSFET
G
2
S
2
N-Channel MOSFE
T
D
1
D
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.4 3.1
A
T
A
= 70 °C
2.7 2.5
Pulsed Drain Current (10 µs Pulse Width)
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
0.83 0.69
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.0 0.83
W
T
A
= 70 °C
0.96 0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
90 125
°C/W
Steady State 126 150
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
65 80
RoHS
COMPLIANT

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