Datasheet

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Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5935CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.10.30.50.70.91.11.3
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
0.15
0.18
02468
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= - 3.1 A
0
10
20
30
40
Time (s)
Power (W)
110
-1
10
-4
10
-3
10
-2
100010010
Safe Operating Area, Junction-to-Case
T
A
= 25 °C
Single Pulse
100 ms
1s,10s
DC
Limited byR
DS(on)
*
BVDSS
Limited
10 ms
1ms
100 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1