Datasheet

Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
3
Vishay Siliconix
Si5935CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5V thru 2 V
V
GS
=1.5V
V
GS
=1V
0.00
0.04
0.08
0.12
0.16
0.20
02468 10
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
0
1
2
3
4
5
012345678
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
=3.1A
V
DS
=10V
V
DS
=16V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.6
1.2
1.8
2.4
3.0
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
150
300
450
600
750
900
048 12 16 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=-4.5V,I
D
=-3.1A
V
GS
= - 2.5 V,I
D
=-2.8 A