Datasheet

ManualsBrandsVISHAY ManualsFETsSI5935CDC-T1-GE3, MOSFET

Vishay Siliconix

Si5935CDC

Document Number: 68965

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

Dual P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFETs

• 100 % R

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

• Battery Switch

Notes:

a. Based on T

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequade bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 130 °C/W.

g. Package limited.

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

- 20

0.100 at V

= - 4.5 V

- 4

6.2 nC

0.120 at V

= - 2.5 V

- 4

0.156 at V

= - 1.8 V

- 3.8

Marking Code

DK XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

1206-8 ChipFET

Ordering Information: Si5935CDC-T1-E3 (Lead (Pb)-free)

Si5935CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 20

Gate-Source Voltage

± 8

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 4

= 70 °C

- 3.8

= 25 °C

- 3.1

b, c

= 70 °C

- 2.5

b, c

Pulsed Drain Current

- 10

Source Drain Current Diode Current

= 25 °C

- 2.6

= 25 °C

- 1.7

b, c

Maximum Power Dissipation

= 25 °C

3.1

= 70 °C

2.0

= 25 °C

1.3

b, c

= 70 °C

0.8

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit

Maximum Junction-to-Ambient

b, f

t ≤ 5 s

thJA

77 95

°C/W

Maximum Junction-to-Foot (Drain) Steady State

thJF

33 40

Summary of content (11 pages)

PAGE 1
Si5935CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.
PAGE 2
Si5935CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 20 Typ.a Max. Unit Static VDS VGS = 0 V, ID = - 250 µA ΔVDS/TJ ID = - 250 µA - 19 ΔVGS(th)/TJ ID = - 250 µA 2.5 VGS(th) VDS = VGS, ID = - 250 µA - 1.
PAGE 3
Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 3.0 VGS = 5 V thru 2 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 8 6 VGS = 1.5 V 4 2 1.8 TC = 25 °C 1.2 TC = 125 °C 0.6 VGS = 1 V TC = - 55 °C 0 0 1 2 3 4 0.0 0.0 5 0.4 VDS - Drain-to-Source Voltage (V) 0.8 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 900 750 0.16 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.
PAGE 4
Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.18 100 ID = - 3.1 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.15 10 TJ = 25 °C TJ = 150 °C 1 0.12 TJ = 125 °C 0.09 TJ = 25 °C 0.06 0.03 0.00 0.1 0.1 0.3 0.5 0.7 0.9 1.1 0 1.3 2 VSD - Source-to-Drain Voltage (V) 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 0.8 0.7 30 ID = 250 µA Power (W) VGS(th) (V) 0.6 0.
PAGE 5
Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 I D - Drain Current (A) 5 4 Package Limited 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.2 3.2 Power (W) Power (W) 0.9 2.4 1.6 0.6 0.3 0.8 0.0 0.
PAGE 6
Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.
PAGE 7
Package Information Vishay Siliconix 1206-8 ChipFETR 4 L D 8 7 6 5 4 1 S 2 e 3 E1 5 6 7 8 4 3 2 1 E 4 b x c Backside View 2X 0.10/0.13 R C1 A DETAIL X NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface.
PAGE 8
AN812 Vishay Siliconix Dual-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power semiconductor devices.
PAGE 9
AN812 Vishay Siliconix Front of Board Back of Board ChipFETr vishay.com FIGURE 3. Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 30_C/W typical, 40_C/W maximum for the dual device. The “foot” is the drain lead of the device as it connects with the body.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET® 0.093 0.026 0.016 0.010 (0.650) (0.406) (0.244) 0.036 (0.914) 0.022 (0.559) (2.032) 0.080 (2.357) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 11
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