Datasheet

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Document Number: 68822
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5933CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Forward Diode Voltage vs. Temperature
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.01.21.41.6
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
02468
T
J
=25 °C
T
J
= 125 °C
I
D
=2.5A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
1
2
3
4
5
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
100 ms
1s,10s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D