Datasheet

Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
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7
Vishay Siliconix
Si5855CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=110 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.05
0.02
Single Pulse
0.1
Reverse Current vs. Junction Temperature
- 50 - 25 0 25 50 75 100 125 150
0.0001
1
100
T
J
- Junction Temperature (°C)
- Reverse Current (mA)I
R
0.001
0.01
0.1
10
20 V
10 V
Forward Voltage Drop
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.1
1
10
V
F
- Forward Voltage Drop (V)
- Forward Current (A)I
F
T
J
= 25 °C
T
J
= 150 °C