Datasheet

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Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5855CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On Resistance vs. Drain Current
Gate Charge
Forward Diode Voltage vs. Temp.
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
02468 10
V
GS
= - 2.5 V
V
GS
= - 4.5 V
V
GS
=-1.8V
0
1
2
3
4
5
012345
V
DS
=16V
I
D
=2.5A
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.01.21.41.6
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
90
180
270
360
450
540
048 12 16 20
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V;I
D
=2.5A
V
GS
=2.5V;I
D
=2.2A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
02468
T
J
= 25 °C
T
J
= 125 °C
I
D
=2.5A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)