Datasheet
Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
3
Vishay Siliconix
Si5855CDC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 2.3
A
Pulse Diode Forward Current
I
SM
- 10
Body Diode Voltage
V
SD
I
S
= - 2 A, V
GS
= 0 V
- 0.8 - 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 2 A dI/dt = 100 A/µs T
J
= 25 °C
23 35 ns
Body Diode Reverse Recovery Charge
Q
rr
13 20 nC
Reverse Recovery Fall Time
t
a
10
ns
Reverse Recovery Rise Time
t
b
13
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1 A
0.34 0.375
V
I
F
= 1 A, T
J
= 125 °C
0.255 0.290
Maximum Reverse Leakage Current
I
rm
V
r
= 20 V
0.05 0.500
mA
V
r
= 20 V, T
J
= 85 °C
220
V
r
= 20 V, T
J
= 125 °C
10 100
Junction Capacitance
C
T
V
r
= 10 V
90 pF
Output Characteristics
0
2
4
6
8
10
012345
V
GS
=5V thru 2.5 V
V
GS
=1V
V
GS
=2V
V
GS
=1.5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
Transfer Characteristics
0.0
0.5
1.0
1.5
2.0
0.0 0.3 0.6 0.9 1.2 1.5
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D