Datasheet
www.vishay.com
2
Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5855CDC
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on FR4 board.
c. t ≤ 5 s.
d. See Solder Profile (www.vishay.com/doc?73257
). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for MOSFETs is 130 °C/W.
g. Maximum under steady state conditions for Schottky is 115 °C/W.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
b, c, f
R
thJA
82 99
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
R
thJF
35 45
Maximum Junction-to-Ambient (Schottky)
b, c, g
R
thJA
54 65
Maximum Junction-to-Foot (Drain) (Schottky)
R
thJF
30 40
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS/TJ
I
D
= - 250 µA
- 19
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)/TJ
2
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.45 - 1 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 ns
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2.5 A
0.120 0.144
Ω
V
GS
= - 2.5 V, I
D
= - 2.2 A
0.150 0.180
V
GS
= - 1.8 V, I
D
= - 2.0 A
0.185 0.222
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 2.5 A
18 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
276
pFOutput Capacitance
C
oss
60
Reverse Transfer Capacitance
C
rss
43
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 5 V, I
D
= - 2.5 A
4.5 6.8
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
4.1 6.2
Gate-Source Charge
Q
gs
0.6
Gate-Drain Charge
Q
gd
1.0
Gate Resistance
R
g
f = 1 MHz 1.1 5.5 11 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 5 Ω
I
D
≅ - 2 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
11 17
ns
Rise Time
t
r
34 51
Turn-Off Delay Time
t
d(off)
22 33
Fall Time
t
f
816
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 5 Ω
I
D
≅ - 2 A, V
GEN
= - 5 V, R
g
= 1 Ω
510
Rise Time
t
r
14 21
Turn-Off Delay Time
t
d(off)
17 26
Fall Time
t
f
816