Datasheet

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Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5853DDC
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
0123
V
GS
=5V thru 2.5 V
V
GS
=1.5V
V
GS
=1V
V
GS
=2V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
02468 10
V
GS
=1.8V
V
GS
=4.5V
V
GS
=2.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
02468
V
DS
=16V
I
D
=2.9A
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
0.0 0.4 0.8 1.2 1.6 2.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V )
- Drain Current (A)I
D
C
rss
0
100
200
300
400
500
600
700
048 12 16 20
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=2.9A
V
GS
=4.5V,2.5V,1.8V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)