Datasheet

Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
3
Vishay Siliconix
Si4948BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 5 10 15 20 25
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 30 V
I
D
= 3.1 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
20
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
I
D
= 3.1 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0246810
I
D
= 3.1 A
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
- On-Resistance (Ω)