Datasheet

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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
30
0 0.2 0.4 0.6 0.8
T
J
= 175 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
T
J
= 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
= 5.3 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 25 °C
T
J
= 150 °C
0
15
25
5
10
Power (W)
Time (s)
20
10 100010.10.01 100
Safe Operating Area, Junction-to-Ambient
100
1
0.01 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
0.1
1 ms
10 ms
100 ms
Limited by R
DS(on)*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
T
A
= 25 °C
Single Pulse
100 µs
DC
10 s
1 s