Datasheet

Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
3
Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 5 V
4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
0.000
0.020
0.040
0.060
0.080
0.100
0 5 10 15 20 25 30
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
0 4 8 12 16 20
I
D
= 5.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 48 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
T
C
= 150 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
1200
0 102030405060
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 4.5 V
I
D
= 5.3 A