Datasheet

Vishay Siliconix
Si4946BEY
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
1
Dual N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % R
g
Tested
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
60
0.041 at V
GS
= 10 V
6.5
9.2 nC
0.052 at V
GS
= 4.5 V
5.8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
6.5
A
T
C
= 70 °C
5.5
T
A
= 25 °C
5.3
a, b
T
A
= 70 °C
4.4
a, b
Pulsed Drain Current
I
DM
30
Continuous Source Drain Diode Current
T
C
= 25 °C
I
S
3.1
T
A
= 25 °C
2
a, b
Avalanche Current
L = 0 1 mH
I
AS
12
Single-Pulse Avalanche Energy
E
AS
7.2 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.7
W
T
C
= 70 °C
2.6
T
A
= 25 °C
2.4
a, b
T
A
= 70 °C
1.7
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 10 s
R
thJA
50 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
33 41