Datasheet

Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
www.vishay.com
3
Vishay Siliconix
Si4936CDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
=10V thru 4 V
V
GS
=3V
V
GS
= 1 V, 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0123456
I
D
=5A
V
DS
=24V
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
01234
T
C
= 25 °C
T
C
= 125 °C
T
C
=- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
100
200
300
400
0 5 10 15 20 25 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V;
I
D
=4.7A
V
GS
=10V;I
D
=5A
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)