Datasheet

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Document Number: 74469
S09-0767-Rev. B, 04-May-09
Vishay Siliconix
Si4936BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
T
J
= 25 °C
100
1.4
1.6
1.8
2.0
2.2
2.4
2.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
V
GS
- Gate-to-Source Voltage (V)
0.02
0.04
0.06
0.08
0.10
345678910
- On-Resistance (Ω)
R
DS(on)
125 °C
25 °C
I
D
= 5.9 A
0
10
20
30
40
50
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
1 ms
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
1 s
10 s
100 µs
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)