Datasheet

Document Number: 74469
S09-0767-Rev. B, 04-May-09
www.vishay.com
3
Vishay Siliconix
Si4936BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
- Drain Current (A)
I
D
3 V
4 V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 6 12 18 24 30
I
D
- Drain Current (A)
V
GS
= 4.5 V
- On-Resistance (Ω)R
DS(on)
V
GS
= 10 V
0
2
4
6
8
10
0246810
Q
g
- Total Gate Charge (nC)
I
D
= 5.9 A
- Gate-to-Source Voltage (V)
V
GS
V
DS
= 15 V
V
DS
= 24 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 25 C
T
C
= - 55 °C
T
C
= 125 °C
- Drain Current (A)I
D
C
rss
V
DS
- Drain-to-Source Voltage (V)
0
200
400
600
800
0 5 10 15 20 25 30
C
oss
C
iss
C - Capacitance (pF)
T
J
- Junction Temperature (°C)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 5.9 A
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V