Datasheet

Vishay Siliconix
Si4936BDY
Document Number: 74469
S09-0767-Rev. B, 04-May-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
30
0.035 at V
GS
= 10 V
6.9
4.5 nC
0.051 at V
GS
= 4.5 V
5.7
D
1
G
1
D
1
D
2
G
2
D
2
SO
-8
5
6
7
8
Top View
2
3
4
1
S
1
S
2
Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free)
Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
6.9
A
T
C
= 70 °C
5.5
T
A
= 25 °C
5.9
a, b
T
A
= 70 °C
4.7
a, b
Pulsed Drain Current
I
DM
30
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
2.3
T
A
= 25 °C
1.7
a, b
Maximum Power Dissipation
T
C
= 25 °C
P
D
2.8
W
T
C
= 70 °C
1.8
T
A
= 25 °C
2
a, b
T
A
= 70 °C
1.3
a, b
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 10 s
R
thJA
58 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
38 45