Datasheet
www.vishay.com
4
Document Number: 72001
S09-0869-Rev. D, 18-May-09
Vishay Siliconix
Si4925BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
Single Pulse Power
0
20
30
10
15
Power (W)
Time (s)
25
1 100 6001010
-
1
10
-
2
5
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
P(t) = 10
DC
0.1
I
DM
Limited
I
D(on)
Limited
Limited by R
DS(on)*
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM