Datasheet

Document Number: 72001
S09-0869-Rev. D, 18-May-09
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3
Vishay Siliconix
Si4925BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.02
0.04
0.06
0.08
0 10203040
V
GS
= 10 V
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
V
DS
= 15 V
I
D
= 7.1 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
50
10
1
T
J
= 25 °C
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
0 6 12 18 24 30
C
rss
C
oss
C
iss
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 7.1 A
R
DS(on)
- On-Resistance
Normalized
T
J
- Junction Temperature (°C)
0.00
0.02
0.04
0.06
0.08
0246810
I
D
= 7.1 A
I
D
= 3 A
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)