Datasheet

Vishay Siliconix
Si4900DY
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
www.vishay.com
1
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
APPLICATIONS
• LCD TV CCFL Inverter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
60
0.058 at V
GS
= 10 V
5.3
13 nC
0.072 at V
GS
= 4.5 V
4.7
Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free)
Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
5.3
A
T
C
= 70 °C
4.3
T
A
= 25 °C
4.3
b, c
T
A
= 70 °C
3.4
b, c
Pulsed Drain Current (10 µs Width)
I
DM
20
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
2.6
T
A
= 25 °C
1.7
b, c
Avalanche Current
L = 0 1 mH
I
AS
11
Single-Pulse Avalanche Energy
E
AS
6.1 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.1
W
T
C
= 70 °C
2
T
A
= 25 °C
2
b, c
T
A
= 70 °C
1.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, d
R
thJA
55 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
33 40