Datasheet

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Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
Vishay Siliconix
Si4850EY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71146
.
Threshold Voltage
- 1.2
- 0.8
- 0.4
0.0
0.4
0.8
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
Single Pulse Power
0.01
0
1
50
20
30
10 10000.1
Time (s)
10
40
)W( rewoP
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
evitceffE dez
i
lam
r
o
N tneisnarT
ecnadepm
I
lamr
e
hT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
evi
t
ceffE dezilamroN tneisnarT
e
cnadepmI lamrehT