Datasheet

Vishay Siliconix
Si4850EY
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
60
0.022 at V
GS
= 10 V
8.5
0.031 at V
GS
= 4.5 V
7.2
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
a
T
A
= 25 °C
I
D
8.5 6.0
A
T
A
= 70 °C
7.1 5.0
Pulsed Drain Current
I
DM
40
Avalanche Current
I
AS
15
Single Pulse Avalanche Energy
E
AS
11 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.3 1.7
W
T
A
= 70 °C
2.3 1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
36 45
°C/WSteady State 75 90
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17 20