Datasheet

Document Number: 71356
S09-0870-Rev. C, 18-May-09
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3
Vishay Siliconix
Si4848DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
R
DS(on)
0.00
0.03
0.06
0.09
0.12
0.15
0 5 10 15 20 25
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
- On-Resistance (Ω)
0
4
8
12
16
20
0 6 12 18 24 30
V
DS
= 75 V
I
D
= 3.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
50
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
300
600
900
1200
0 30 60 90 120 150
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0246810
I
D
= 3.5 A
- On-Resistance R
DS(on)
V
GS
- Gate-to-Source Voltage (V)